Papers › Physics-based Model for Nonuniform Thermionic Electron Emission from Polycrystalline Cathodes
Physics-based Model for Nonuniform Thermionic Electron Emission from Polycrystalline Cathodes
Dongzheng Chen, Ryan Jacobs, John Petillo, Vasilios Vlahos, Kevin L. Jensen, Dane Morgan, John Booske
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Experimental observations of thermionic electron emission demonstrate a smooth transition between TL and FSCL regions of the emitted-current-density-versus-temperature (J-T) (Miram) curve and the emitted-current-density-versus-voltage (J-V) curve. Knowledge of the temperature and shape of the TL-FSCL transition is important in evaluating the thermionic electron emission performance of cathodes, including predicting the lifetime. However, there have been no first-principles physics-based models that can predict the smooth TL-FSCL transition region for real thermionic cathodes without applying physically difficult to justify a priori assumptions or empirical phenomenological equations. Previous work detailing the nonuniform thermionic emission found that the effects of 3-D space charge, patch fields, and Schottky barrier lowering can lead to a smooth TL-FSCL transition region from a model thermionic cathode surface with a checkerboard spatial distribution of work function values. In this work, we construct a physics-based nonuniform emission model for commercial dispenser cathodes for the first time. This emission model is obtained by incorporating the cathode surface grain orientation via electron backscatter diffraction (EBSD) and the facet-orientation-specific work function values from density functional theory (DFT) calculations. The model enables construction of two-dimensional emitted current density maps of the cathode surface and corresponding J-T and J-V curves. The predicted emission curves show excellent agreement with experiment, not only in TL and FSCL regions but, crucially, also in the TL-FSCL transition region. This model improves the understanding on the relationship between thermionic emission and cathode microstructure, which is beneficial to the design of vacuum electronic devices.
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