Papers › Non-collinear 2k antiferromagnetism in the Zintl semiconductor Eu₅In₂Sb₆
Non-collinear 2k antiferromagnetism in the Zintl semiconductor Eu₅In₂Sb₆
Vincent C. Morano, Jonathan Gaudet, Nicodemos Varnava, Tanya Berry, Thomas Halloran, Chris J. Lygouras, Xiaoping Wang, Christina M. Hoffman, Guangyong Xu, Jeffrey W. Lynn, Tyrel M. McQueen, David Vanderbilt, Collin L. Broholm
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Eu₅In₂Sb₆ is an orthorhombic non-symmorphic small band gap semiconductor with three distinct Eu²⁺ sites and two low-temperature magnetic phase transitions. The material displays one of the greatest (negative) magnetoresistances of known stoichiometric antiferromagnets and belongs to a family of Zintl materials that may host an axion insulator. Using single crystal neutron diffraction, we show that the T_(N1)=14 K second-order phase transition is associated with long-range antiferromagnetic order within the chemical unit cell ( k₁ = (000) ). Upon cooling below T_(N1), the relative sublattice magnetizations of this structure vary until a second-order phase transition at T_(N2)=7 K that doubles the unit cell along the ĉ axis ( k₂ = (001/2) ). We show the anisotropic susceptibility and our magnetic neutron diffraction data are consistent with magnetic structures described by the Γ₃ irreducible representation with the staggered magnetization of the k₁ and k₂ components polarized along the b̂ and â axis, respectively. As the k₂ component develops, the amplitude of the k₁ component is reduced, which indicates a 2k non-collinear magnetic structure. Density functional theory is used to calculate the energies of these magnetic structures and to show the k₁ phase is a metal so T_(N1) is a rare example of a unit-cell-preserving second-order phase transition from a paramagnetic semiconductor to an antiferromagnetic metal. DFT indicates the transition at T_(N2) to a doubled unit cell reduces the carrier density of the metal, which is consistent with resistivity data.
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