Papers › Mechanisms of Andreev reflection in quantum Hall graphene
Mechanisms of Andreev reflection in quantum Hall graphene
Antonio L. R. Manesco, Ian Matthias Flór, Chun-Xiao Liu, Anton R. Akhmerov
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We simulate a hybrid superconductor-graphene device in the quantum Hall regime to identify the origin of downstream resistance oscillations in a recent experiment [Zhao et. al. Nature Physics 16, (2020)]. In addition to the previously studied Mach-Zehnder interference between the valley-polarized edge states, we consider disorder-induced scattering, and the previously overlooked appearance of the counter-propagating states generated by the interface density mismatch. Comparing our results with the experiment, we conclude that the observed oscillations are induced by the interfacial disorder, and that lattice-matched superconductors are necessary to observe the alternative ballistic effects.
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