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Learning and Controlling Silicon Dopant Transitions in Graphene using Scanning Transmission Electron Microscopy

21 Nov 2023arXiv:2311.17894archive 2025-07-28

Max Schwarzer, Jesse Farebrother, Joshua Greaves, Ekin Dogus Cubuk, Rishabh Agarwal, Aaron Courville, Marc G. Bellemare, Sergei Kalinin, Igor Mordatch, Pablo Samuel Castro, Kevin M. Roccapriore

We introduce a machine learning approach to determine the transition dynamics of silicon atoms on a single layer of carbon atoms, when stimulated by the electron beam of a scanning transmission electron microscope (STEM). Our method is data-centric, leveraging data collected on a STEM. The data samples are processed and filtered to produce symbolic representations, which we use to train a neural network to predict transition probabilities. These learned transition dynamics are then leveraged to guide a single silicon atom throughout the lattice to pre-determined target destinations. We present empirical analyses that demonstrate the efficacy and generality of our approach.

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