Papers › Giant non-linear susceptibility of hydrogenic donors in silicon and germanium
Giant non-linear susceptibility of hydrogenic donors in silicon and germanium
Nguyen H. Le, Grigory V. Lanskii, G. Aeppli, B. N. Murdin
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Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals. Here, we derive the equivalent technique for hydrogenic impurities in multi-valley semiconductors. While the absorption has useful applications, it is primarily a loss process; conversely, the non-linear susceptibility is a crucial parameter for active photonic devices. For Si:P, we predict the hyperpolarizability ranges from χ⁽³⁾/n_(3D)=2.9 to 580 ×10⁻³⁸ m⁵/V² depending on the frequency, even while avoiding resonance. Using samples of a reasonable density, n_(3D), and thickness, L, to produce third-harmonic generation at 9 THz, a frequency that is difficult to produce with existing solid-state sources, we predict that χ⁽³⁾ should exceed that of bulk InSb and χ⁽³⁾L should exceed that of graphene and resonantly enhanced quantum wells.
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