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First-principles study of electric-field-induced topological phase transition in one-bilayer Bi(111)
Hikaru Sawahata, Naoya Yamaguchi, Hiroki Kotaka, Fumiyuki Ishii
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Using first-principles calculations, we found the topological phase transition induced by electric fields in one-bilayer Bi(111). The bandgap decreased with increasing electric field strength, and it is closed at 2.1 V/{\AA}. For fields exceeding 2.1 V/{\AA}, the bandgap increased with increasing electric field strength, reaching 0.34 eV at 4.0 V/{\AA}. We computed the Z₂ invariant that characterizes topological insulator phases. As results, one-bilayer Bi(111) showed a topological phase transition induced by the electric field, from the topological insulator phase to the trivial insulator phase through a Dirac semimetal. This topological phase transition could be applied to novel devices.
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