Papers › Fast Mølmer-Sørensen gates in trapped-ion quantum processors with compensated carrier...
Fast Mølmer-Sørensen gates in trapped-ion quantum processors with compensated carrier transition
Evgeny Anikin, Andrey Chuchalin, Nikita Morozov, Olga Lakhmanskaya, Kirill Lakhmanskiy
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Carrier transition is one of the major factors hindering the high-speed implementation of the M{\o}lmer-S{\o}rensen gates in trapped-ion quantum processors. We present an approach to design laser pulse shapes for the M{\o}lmer-S{\o}rensen gate in ion chains which accounts for the effect of carrier transition on qubit-phonon dynamics. We show that the fast-oscillating carrier term effectively modifies the spin-dependent forces acting on ions, and this can be compensated by a simple nonlinear transformation of a laser pulse. Using numerical simulations for short ion chains and perturbation theory for longer chains up to 20 ions, we demonstrate that our approach allows to reach the infidelity below 10⁻⁴ while keeping the gate duration of the order of tens of microseconds.
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