Papers › Application-driven Design Exploration for Dense Ferroelectric Embedded Non-volatile Memories
Application-driven Design Exploration for Dense Ferroelectric Embedded Non-volatile Memories
Mohammad Mehdi Sharifi, Lillian Pentecost, Ramin Rajaei, Arman Kazemi, Qiuwen Lou, Gu-Yeon Wei, David Brooks, Kai Ni, X. Sharon Hu, Michael Niemier, Marco Donato
The archive published only this paper's code-link row. Authors, date and abstract are from arXiv's metadata (CC0), read from the Kaggle arXiv metadata snapshot of 2026-09-12 where its title matched the archive's; the title is the archive's.
The memory wall bottleneck is a key challenge across many data-intensive applications. Multi-level FeFET-based embedded non-volatile memories are a promising solution for denser and more energy-efficient on-chip memory. However, reliable multi-level cell storage requires careful optimizations to minimize the design overhead costs. In this work, we investigate the interplay between FeFET device characteristics, programming schemes, and memory array architecture, and explore different design choices to optimize performance, energy, area, and accuracy metrics for critical data-intensive workloads. From our cross-stack design exploration, we find that we can store DNN weights and social network graphs at a density of over 8MB/mm^2 and sub-2ns read access latency without loss in application accuracy.
Code
Repository list and official/mentioned flags are the archive's, frozen 2025-07-28. Reachability, where shown, is from one Syntology probe window (2026-09-16 to 2026-09-18); repositories not probed show nothing. GitHub stars are not tracked.
Code Syntology ran Syntology
Not run by Syntology. Nothing on this page verifies that the listed code works.
Results from the paper archive 2025-07-28
No leaderboard rows for this paper in the archive.
Report a problem or propose a change · a person checks every report against the paper or source before anything changes; decisions are listed on /corrections