Papers › A fitting algorithm for optimizing ion implantation energies and fluences
A fitting algorithm for optimizing ion implantation energies and fluences
Pauli Kehayias, Jacob Henshaw, Maziar Saleh Ziabari, Michael Titze, Edward Bielejec, Michael P. Lilly, Andrew M. Mounce
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We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given N energies, we then optimize a set of N energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum N such that the error between the target defect density profile and the defect density profile generated by the N energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 μm surface layers of ¹⁵N or vacancies (using ⁴He).
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